Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy
Crossref DOI link: https://doi.org/10.1063/1.4799367
Published Online: 2013-04-05
Published Print: 2013-04-07
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Hudait, M. K.
Zhu, Y.
Maurya, D.
Priya, S.
Patra, P. K.
Ma, A. W. K.
Aphale, A.
Macwan, I.