Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces
Crossref DOI link: https://doi.org/10.1063/1.4818330
Published Online: 2013-08-12
Published Print: 2013-08-12
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Ahn, Jaesoo
Kent, Tyler
Chagarov, Evgueni
Tang, Kechao
Kummel, Andrew C.
McIntyre, Paul C.