Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells
Crossref DOI link: https://doi.org/10.1063/1.4831750
Published Online: 2013-11-14
Published Print: 2013-11-14
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Fan, W. J.