Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length
Crossref DOI link: https://doi.org/10.1063/1.4865921
Published Online: 2014-02-19
Published Print: 2014-02-17
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Tomioka, Katsuhiro
Fukui, Takashi