Electric double-layer transistor using layered iron selenide Mott insulator TlFe <sub>1.6</sub> Se <sub>2</sub>
Crossref DOI link: https://doi.org/10.1073/pnas.1318045111
Published Online: 2014-03-03
Published Print: 2014-03-18
Update policy: https://doi.org/10.1073/pnas.cm10313
Katase, Takayoshi
Hiramatsu, Hidenori
Kamiya, Toshio
Hosono, Hideo
Publication History
Published: 2014-03-03