Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
Crossref DOI link: https://doi.org/10.1063/1.4905677
Published Online: 2015-01-09
Published Print: 2015-01-14
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Wu, Y.
Chen, C.-Y.
del Alamo, J. A.
Funding for this research was provided by:
Office of Naval Research