Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
Crossref DOI link: https://doi.org/10.1063/1.4927529
Published Online: 2015-08-03
Published Print: 2015-08-03
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Nishiguchi, Katsuhiko
Castellanos-Gomez, Andres
Yamaguchi, Hiroshi
Fujiwara, Akira
van der Zant, Herre S. J.
Steele, Gary A.