Kim, Ki Seok
Sirse, Nishant
Kim, Ki Hyun
Ellingboe, Albert Rogers
Kim, Kyong Nam
Yeom, Geun Young
Funding for this research was provided by:
Korea Evaluation Institute of Industrial Technology (10050501)
Samsung Electronics and the National Strategic Research Framework (NSRF)
Enterprise Ireland (CF20144043)
Journal title: Journal of Physics D: Applied Physics
Article type: paper
Article title: Characteristics of silicon nitride deposited by VHF (162 MHz)-plasma enhanced chemical vapor deposition using a multi-tile push–pull plasma source
Copyright information: © 2016 IOP Publishing Ltd
Publication dates
Date received: 2016-05-31
Date accepted: 2016-08-08
Online publication date: 2016-09-02