Yatabe, Zenji
Asubar, Joel T
Hashizume, Tamotsu
Journal title: Journal of Physics D: Applied Physics
Article type: rev
Article title: Insulated gate and surface passivation structures for GaN-based power transistors
Copyright information: © 2016 IOP Publishing Ltd
License information: cc-by Original content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2015-09-09
Date accepted: 2016-07-21
Online publication date: 2016-09-07