On a relationship among optical power, current density, and junction temperature for InGaN-based light-emitting diodes
Crossref DOI link: https://doi.org/10.1063/1.4974877
Published Online: 2017-01-23
Published Print: 2017-01-01
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Guo, Zi-Quan
Shih, Tien-Mo
Peng, Zhang-Bao
Qiu, Hai-Hua
Lu, Yi-Jun
Gao, Yu-Lin
Zhu, Li-Hong
Zheng, Jiang-Hui
Chen, Zhong
Funding for this research was provided by:
National Natural Science Foundation of China (11604285, 51605404, 61504112)