Use of a bilayer lattice-matched AlInGaN barrier for improving the channel carrier confinement of enhancement-mode AlInGaN/GaN hetero-structure field-effect transistors
Crossref DOI link: https://doi.org/10.1063/1.4989836
Published Online: 2017-06-27
Published Print: 2017-06-28
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Rahbardar Mojaver, Hassan http://orcid.org/0000-0003-2654-4789
Gosselin, Jean-Lou
Valizadeh, Pouya
Funding for this research was provided by:
Natural Sciences and Engineering Research Council of Canada