Comparison of the leading-edge timing walk in pulsed TOF laser range finding with avalanche bipolar junction transistor (BJT) and metal-oxide-semiconductor (MOS) switch based laser diode drivers
Crossref DOI link: https://doi.org/10.1063/1.4999253
Published Online: 2017-12-15
Published Print: 2017-12-01
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Hintikka, Mikko
Hallman, Lauri http://orcid.org/0000-0002-7271-0189
Kostamovaara, Juha
Funding for this research was provided by:
Academy of Finland (255359, 263705, 307362)