Crossmark

Design and epitaxial growth of quality-enhanced crack-free GaN films on AlN/Al heterostructures and their nucleation mechanism

Crossref DOI link: https://doi.org/10.1039/C7CE01995E

Published Online: 2018

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Wang, Wenliang

Zheng, Yulin

Zhang, Xiuye

Li, Yuan

Lu, Zhenya

Li, Guoqiang https://orcid.org/0000-0002-1493-6657
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51372001, 51572091, 51602105, 51702102)

Natural Science Foundation of Guangdong Province (2017A030313331)

China Postdoctoral Science Foundation (2017 M610520)
License Information

Accepted Manuscript valid from 2018-12-20
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SIMILARITY CHECK

: This document is Similarity Check deposited

IDENTIFIERS

: Guoqiang Li (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 17 November 2017; Accepted 20 December 2017; Accepted Manuscript published 20 December 2017; Advance Article published 9 January 2018; Version of Record published 29 January 2018