Crossmark

Inserted metals for low-energy magnetoelectric switching in a Cr<sub>2</sub>O<sub>3</sub>/ferromagnet interfacial exchange-biased thin film system

Crossref DOI link: https://doi.org/10.1039/C7TC05375D

Published Online: 2018

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Ye, Shujun https://orcid.org/0000-0002-4621-8887
Nozaki, Tomohiro

Kotani, Yoshinori

Toyoki, Kentaro

Nakamura, Tetsuya

Yonemura, Syougo

Shibata, Tatsuo

Pati, Satya Prakash

Al-Mahdawi, Muftah

Shiokawa, Yohei

Sahashi, Masashi
Funding

Funding for this research was provided by:

Cabinet Office, Government of Japan

Japan Society for the Promotion of Science (16H05975)
License Information

Accepted Manuscript valid from 2018-12-20
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SIMILARITY CHECK

: This document is Similarity Check deposited

IDENTIFIERS

: Shujun Ye (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 23 November 2017; Accepted 20 December 2017; Accepted Manuscript published 20 December 2017; Advance Article published 26 January 2018; Version of Record published 22 March 2018