Crossmark

Defect formation in In<sub>2</sub>O<sub>3</sub>and SnO<sub>2</sub>: a new atomistic approach based on accurate lattice energies

Crossref DOI link: https://doi.org/10.1039/C8TC04760J

Published Online: 2018

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Hou, Qing https://orcid.org/0000-0002-3061-7090
Buckeridge, John https://orcid.org/0000-0002-2537-5082
Lazauskas, Tomas https://orcid.org/0000-0002-8351-9857
Mora-Fonz, David https://orcid.org/0000-0002-0310-9891
Sokol, Alexey A. https://orcid.org/0000-0003-0178-1147
Woodley, Scott M. https://orcid.org/0000-0003-3418-9043
Catlow, C. Richard A.
Funding

Funding for this research was provided by:

Engineering and Physical Sciences Research Council (EP/K016288/1)

China Scholarship Council
License Information

Version of Record valid from 2018-10-22
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

IDENTIFIERS

: Qing Hou (ORCID)

: John Buckeridge (ORCID)

: John Buckeridge (ResearcherID)

: Tomas Lazauskas (ORCID)

: Tomas Lazauskas (ResearcherID)

: David Mora-Fonz (ORCID)

: Alexey A. Sokol (ORCID)

: Alexey A. Sokol (ResearcherID)

: Scott M. Woodley (ORCID)

: Scott M. Woodley (ResearcherID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 20 September 2018; Accepted 15 October 2018; Accepted Manuscript published 22 October 2018; Advance Article published 6 November 2018; Version of Record published 22 November 2018