Crossmark

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Crossref DOI link: https://doi.org/10.1039/C8CE01830H

Published Online: 2019

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Hubáček, Tomáš https://orcid.org/0000-0003-0725-484X
Hospodková, Alice

Kuldová, Karla https://orcid.org/0000-0003-1053-0809
Oswald, Jiří

Pangrác, Jiří

Jarý, Vitězslav

Dominec, Filip

Slavická Zíková, Markéta

Hájek, František

Hulicius, Eduard

Vetushka, Alexej

Ledoux, Gilles

Dujardin, Christophe https://orcid.org/0000-0002-0205-9837
Nikl, Martin
Funding

Funding for this research was provided by:

Grantová Agentura České Republiky (16-11769S)

Ministerstvo Školství, Mládeže a Tělovýchovy (NPU LO1603)

H2020 Spreading Excellence and Widening Participation (690599)

Technical University of Liberec
License Information

Accepted Manuscript valid from 2019-11-26
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Tomáš Hubáček (ORCID)

: Karla Kuldová (ORCID)

: Karla Kuldová (ResearcherID)

: Alexej Vetushka (ResearcherID)

: Gilles Ledoux (ResearcherID)

: Christophe Dujardin (ORCID)

: Christophe Dujardin (ResearcherID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 25 October 2018; Accepted 26 November 2018; Accepted Manuscript published 26 November 2018; Advance Article published 10 December 2018; Version of Record published 2 January 2019