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Causes of ferroelectricity in HfO<sub>2</sub>-based thin films: an <i>ab initio</i> perspective

Published Online: 2019

Authors

Dogan, Mehmet https://orcid.org/0000-0001-5414-362X
Gong, Nanbo https://orcid.org/0000-0002-9797-5124
Ma, Tso-Ping

Ismail-Beigi, Sohrab https://orcid.org/0000-0002-7331-9624
Funding

Funding for this research was provided by:

National Science Foundation (DMR-1119826, ECCS-1609162, TG-MCA08X007)
License Information

Accepted Manuscript valid from 2020-05-15
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SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Mehmet Dogan (ORCID)

: Nanbo Gong (ORCID)

: Sohrab Ismail-Beigi (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 3 April 2019; Accepted 15 May 2019; Accepted Manuscript published 15 May 2019; Advance Article published 30 May 2019; Version of Record published 12 June 2019

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