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Metal halide perovskites for resistive switching memory devices and artificial synapses

Crossref DOI link: https://doi.org/10.1039/C9TC02233C

Published Online: 2019

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Li, Bixin https://orcid.org/0000-0003-1134-1196
Hui, Wei

Ran, Xueqin

Xia, Yingdong

Xia, Fei

Chao, Lingfeng

Chen, Yonghua https://orcid.org/0000-0002-9694-4246
Huang, Wei
Funding

Funding for this research was provided by:

National Basic Research Program of China (2015CB932200)

National Natural Science Foundation of China (51602149, 61705102)

Natural Science Foundation of Jiangsu Province (BK20161011, BK20161010, BK20150064)

Six Talent Peaks Project in Jiangsu Province
License Information

Accepted Manuscript valid from 2020-05-31
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

IDENTIFIERS

: Bixin Li (ORCID)

: Yonghua Chen (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 26 April 2019; Accepted 30 May 2019; Accepted Manuscript published 31 May 2019; Advance Article published 12 June 2019; Version of Record published 27 June 2019