Excitation-intensity dependence of shallow and deep-level photoluminescence transitions in semiconductors
Crossref DOI link: https://doi.org/10.1063/1.5095235
Published Online: 2019-11-07
Published Print: 2019-11-07
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Spindler, Conrad
Galvani, Thomas
Wirtz, Ludger
Rey, Germain
Siebentritt, Susanne
Funding for this research was provided by:
Fonds National de la Recherche Luxembourg (C13/MS/5857739)