Crossmark

Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model

Crossref DOI link: https://doi.org/10.1039/C9TC04467A

Published Online: 2020

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Li, Guanjie

Li, Xiaomin https://orcid.org/0000-0002-5286-966X
Zhao, Junliang

Yan, Fawang

Zhu, Qiuxiang

Gao, Xiangdong https://orcid.org/0000-0002-3477-9740
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (51572280, 51602329)

National Basic Research Program of China (2016YFA0201103)
License Information

Accepted Manuscript valid from 2020-12-06
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Xiaomin Li (ORCID)

: Xiangdong Gao (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 12 August 2019; Accepted 3 December 2019; Accepted Manuscript published 6 December 2019; Advance Article published 17 December 2019; Version of Record published 23 January 2020