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The coexistence of threshold and memory switching characteristics of ALD HfO<sub>2</sub> memristor synaptic arrays for energy-efficient neuromorphic computing

Crossref DOI link: https://doi.org/10.1039/D0NR02335C

Published Online: 2020

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Abbas, Haider https://orcid.org/0000-0003-4372-2639
Abbas, Yawar https://orcid.org/0000-0002-7722-805X
Hassan, Gul

Sokolov, Andrey Sergeevich https://orcid.org/0000-0003-0337-4027
Jeon, Yu-Rim

Ku, Boncheol

Kang, Chi Jung

Choi, Changhwan https://orcid.org/0000-0002-8386-3885
Funding

Funding for this research was provided by:

National Research Foundation of Korea (NRF-2016M3A7B4910426, NRF-2019R1F1A1057243, NRF-2016R1A6A1A03013422)
License Information

Accepted Manuscript valid from 2021-06-10
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

RELATED DATA

: Supplementary Information

IDENTIFIERS

: Haider Abbas (ORCID)

: Haider Abbas (ResearcherID)

: Yawar Abbas (ORCID)

: Andrey Sergeevich Sokolov (ORCID)

: Changhwan Choi (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 23 March 2020; Accepted 10 June 2020; Accepted Manuscript published 10 June 2020; Advance Article published 29 June 2020; Version of Record published 9 July 2020

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