Crossmark

Vapor–liquid–solid growth of 4H-SiC single crystal films with extremely low carrier densities in chemical vapor deposition with a Pt–Si alloy flux and X-ray topography analysis of their dislocation propagation behaviors

Crossref DOI link: https://doi.org/10.1039/D1CE00625H

Published Online: 2021

Update policy: https://doi.org/10.1039/rsc_crossmark_policy

Authors

Sanoodo, Naoki https://orcid.org/0000-0003-4778-2401
Kato, Tomohisa

Yonezawa, Yoshiyuki

Kojima, Kazutoshi

Matsumoto, Yuji https://orcid.org/0000-0003-1819-5566
Funding

Funding for this research was provided by:

Tohoku University

National Institute of Advanced Industrial Science and Technology

New Energy and Industrial Technology Development Organization

Advanced Low Carbon Technology Research and Development Program
License Information

Accepted Manuscript valid from 2022-06-24
More Information

SIMILARITY CHECK

: This document is Similarity Check deposited

IDENTIFIERS

: Naoki Sanoodo (ORCID)

: Yuji Matsumoto (ORCID)

PEER REVIEW METHOD

: Single-blind

PUBLICATION HISTORY

: Received 10 May 2021; Accepted 23 June 2021; Accepted Manuscript published 24 June 2021; Advance Article published 14 July 2021; Version of Record published 26 July 2021

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