Effect of interfacial SiO<sub>2</sub> layer thickness on the memory performances in the HfAlO<sub><i>x</i></sub>-based ferroelectric tunnel junction for a neuromorphic system
Crossref DOI link: https://doi.org/10.1039/D3TC02137H
Published Online: 2023
Update policy: https://doi.org/10.1039/rsc_crossmark_policy
Park, Yongjin
Kim, Jihyung
Kim, Sunghun
Kim, Dahye
Shim, Wonbo
Kim, Sungjun https://orcid.org/0000-0002-9873-2474
Funding for this research was provided by:
Ministry of Science and ICT, South Korea (IITP-2023-RS-2022-00156295)
Accepted Manuscript valid from 2024-09-13
