Dual-port ferroelectric NAND flash memory for large memory window, QLC programmable and disturbance-free operations
Crossref DOI link: https://doi.org/10.1039/D4TC02210F
Published Online: 2024
Update policy: https://doi.org/10.1039/rsc_crossmark_policy
Joh, Hongrae
Lee, Sangho
Ahn, Jinho
Jeon, Sanghun https://orcid.org/0000-0002-4222-1587
Funding for this research was provided by:
National Research Foundation of Korea (RS-2023-00260527)
Ministry of Trade, Industry and Energy (RS-2023-00231985, RS-2023-00235655)
Accepted Manuscript valid from 2025-08-16
