Vertical β‐Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance
Crossref DOI link: https://doi.org/10.1002/pssa.201900497
Published Online: 2019-09-23
Published Print: 2020-02
Update policy: https://doi.org/10.1002/crossmark_policy
Lu, Xing http://orcid.org/0000-0001-5808-9552
Zhang, Xu
Jiang, Huaxing
Zou, Xinbo
Lau, Kei May
Wang, Gang
Version of Record valid from 2019-09-23
Publication History
Received: 2019-06-26
Published: 2019-09-23