Two dimensional analytical modeling of a high-K gate stack triple-material double gate strained silicon-on-nothing MOSFET with a vertical Gaussian doping
Crossref DOI link: https://doi.org/10.1007/s10825-017-1089-1
Published Online: 2017-11-08
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Banerjee, Pritha http://orcid.org/0000-0003-3691-638X
Saha, Priyanka
Sarkar, Subir Kumar
Funding for this research was provided by:
University Grants Commission (IN)
License valid from 2017-11-08