Physical Modeling on Effective Traps Density Near the Conduction Band Dependence of Electrical Characteristics of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Crossref DOI link: https://doi.org/10.1007/s42341-020-00275-z
Published Online: 2021-01-04
Published Print: 2021-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Marroun, Abdelhafid http://orcid.org/0000-0002-2124-8115
Amar Touhami, Naima
El Hamadi, Taj-eddin
Text and Data Mining valid from 2021-01-04
Version of Record valid from 2021-01-04
Article History
Received: 10 August 2020
Revised: 12 November 2020
Accepted: 21 December 2020
First Online: 4 January 2021
