Design and theoretical comparison of input ESD devices in 180 nm CMOS with focus on low capacitance
Crossref DOI link: https://doi.org/10.1007/s00502-017-0569-0
Published Online: 2018-01-10
Published Print: 2018-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Michalowska-Forsyth, Alicja
Schrey, Patrick
Deutschmann, Bernd
License valid from 2018-01-10
