Graded channel doping junctionless MOSFET: a potential high performance and low power leakage device for nanoelectronic applications
Crossref DOI link: https://doi.org/10.1007/s10825-017-1052-1
Published Online: 2017-08-22
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ferhati, H.
Djeffal, F.
License valid from 2017-08-22