Compact mole fraction-dependent modeling of I-V and C-V characteristics in Al $$_{x}$$ x Ga $$_{1-x}$$ 1 - x N/GaN HEMTs
Crossref DOI link: https://doi.org/10.1007/s10825-017-1067-7
Published Online: 2017-09-19
Published Print: 2018-03
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kermas, Nawel
Djellouli, Bouaza
Bouguenna, Driss
Eshetu, Wondwosen
Moldovan, Oana
IƱiguez, Benjamin
License valid from 2017-09-19