Hazbun, Ramsey http://orcid.org/0000-0002-5170-4011
Hart, John
Hickey, Ryan
Ghosh, Ayana
Fernando, Nalin
Zollner, Stefan
Adam, Thomas N
Kolodzey, James
Funding for this research was provided by:
Army Research Office (W911NF1210380, FA9550-14-1-0207, FA9550-13-1-0022 Subaward Q01573)
Telemedicine and Advanced Technology Research Center (W911NF1210380, FA9550-14-1-0207, FA9550-13-1-0022 Subaward Q01573)
International Business Machines Corporation (W911NF1210380, FA9550-14-1-0207, FA9550-13-1-0022 Subaward Q01573)
Air Force Office of Scientific Research (W911NF1210380, FA9550-14-1-0207, FA9550-13-1-0022 Subaward Q01573)
Air Liquide (W911NF1210380, FA9550-14-1-0207, FA9550-13-1-0022 Subaward Q01573)
This article is maintained by: Elsevier
Article Title: Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition
Journal Title: Journal of Crystal Growth
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.jcrysgro.2016.03.018
Content Type: article
Copyright: © 2016 Published by Elsevier B.V.