Meneghini, M.
Hilt, O.
Fleury, C.
Silvestri, R.
Capriotti, M.
Strasser, G.
Pogany, D.
Bahat-Treidel, E.
Brunner, F.
Knauer, A.
Würfl, J.
Rossetto, I.
Zanoni, E.
Meneghesso, G.
Dalcanale, S.
This article is maintained by: Elsevier
Article Title: Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure
Journal Title: Microelectronics Reliability
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2015.11.026
Content Type: article
Copyright: Copyright © 2015 Elsevier Ltd. All rights reserved.