Whiting, P.G.
Holzworth, M.R.
Lind, A.G.
Pearton, S.J.
Jones, K.S.
Liu, L.
Kang, T.S.
Ren, F.
Xin, Y.
This article is maintained by: Elsevier
Article Title: Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors
Journal Title: Microelectronics Reliability
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.microrel.2017.01.007
Content Type: article
Copyright: © 2017 Elsevier Ltd. All rights reserved.