Takagi, Kenichiro
Nagase, Takashi
Kobayashi, Takashi
Naito, Hiroyoshi
Funding for this research was provided by:
Council for Science and Technology Policy (23360140, 24102011)
Japan Society for the Promotion of Science
Ministry of Education, Culture, Sports, Science and Technology
This article is maintained by: Elsevier
Article Title: High performance top-gate field-effect transistors based on poly(3-alkylthiophenes) with different alkyl chain lengths
Journal Title: Organic Electronics
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.orgel.2013.11.022
Content Type: article
Copyright: Copyright © 2013 Elsevier B.V. All rights reserved.