Compeán-Jasso, V.H.
de Anda-Salazar, F.
Sánchez-Niño, F.
Mishurnyi, V.A.
Martínez-Juarez, J.
Funding for this research was provided by:
CONACYT
PROMEP
FAI at UASLP
This article is maintained by: Elsevier
Article Title: High and abrupt breakdown voltage In0.15Ga0.85As0.14Sb0.86/GaSb junctions grown by LPE
Journal Title: Infrared Physics & Technology
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.infrared.2016.09.008
Content Type: article
Copyright: © 2016 Elsevier B.V. All rights reserved.