Cui, Xiao
Cheng, Weijun
Hua, Qilin
Liang, Renrong
Hu, Weiguo
Wang, Zhong Lin
Funding for this research was provided by:
National Natural Science Foundation of China (51432005, 61574018, 61704008, 61904012)
Chinese Academy of Sciences
National Key Research and Development Program of China (2016YFA0200400, 2016YFA0202703, 2016YFA0302300)
Beijing Innovation Center for Future Chip
This article is maintained by: Elsevier
Article Title: Enhanced performances of AlGaN/GaN HEMTs with dielectric engineering of HfZrOx
Journal Title: Nano Energy
CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.nanoen.2019.104361
Content Type: article
Copyright: © 2019 Elsevier Ltd. All rights reserved.