Graphene transparent electrodes grown by rapid chemical vapor deposition with ultrathin indium tin oxide contact layers for GaN light emitting diodes
Crossref DOI link: https://doi.org/10.1063/1.4802798
Published Online: 2013-04-22
Published Print: 2013-04-22
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Kun, Xu
Chen, Xu
Jun, Deng
Yanxu, Zhu
Weiling, Guo
Mingming, Mao
Lei, Zheng
Jie, Sun
Funding for this research was provided by:
National Natural Science Foundation of China (61076044, 61107026, 61204011)