High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes
Crossref DOI link: https://doi.org/10.1063/1.4879800
Published Online: 2014-05-23
Published Print: 2014-05-19
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Hwang, Wan Sik
Verma, Amit
Peelaers, Hartwin
Protasenko, Vladimir
Rouvimov, Sergei
(Grace) Xing, Huili
Seabaugh, Alan
Haensch, Wilfried
de Walle, Chris Van
Galazka, Zbigniew
Albrecht, Martin
Fornari, Roberto
Jena, Debdeep
Funding for this research was provided by:
NSF (OCI-1053575)