Ionic liquid gating on atomic layer deposition passivated GaN: Ultra-high electron density induced high drain current and low contact resistance
Crossref DOI link: https://doi.org/10.1063/1.4950816
Published Online: 2016-05-16
Published Print: 2016-05-16
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Zhou, Hong
Du, Yuchen http://orcid.org/0000-0002-2971-4774
Ye, Peide D.
Funding for this research was provided by:
U.S. Department of Defense (FA9550-12-1-0180)