Double-layered passivation film structure of Al2O3/SiN<i>x</i> for high mobility oxide thin film transistors
Crossref DOI link: https://doi.org/10.1116/1.4789423
Published Online: 2013-01-24
Published Print: 2013-03-01
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Ko Park, Sang-Hee
Ryu, Min-Ki
Oh, Himchan
Hwang, Chi-Sun
Jeon, Jae-Hong
Yoon, Sung-Min