Incorporation of Al or Hf in atomic layer deposition TiO2 for ternary dielectric gate insulation of InAlN/GaN and AlGaN/GaN metal-insulator-semiconductor-heterojunction structure
Crossref DOI link: https://doi.org/10.1116/1.4972252
Published Online: 2016-12-20
Published Print: 2017-01-01
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Colon, Albert
Stan, Liliana
Divan, Ralu
Shi, Junxia