Epitaxial growth of large area single-crystalline few-layer MoS2 with high space charge mobility of 192 cm2 V−1 s−1
Crossref DOI link: https://doi.org/10.1063/1.4893143
Published Online: 2014-08-19
Published Print: 2014-08-18
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Ma, Lu
Nath, Digbijoy N.
Lee, Edwin W. II
Lee, Choong Hee
Yu, Mingzhe
Arehart, Aaron
Rajan, Siddharth
Wu, Yiying