Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion
Crossref DOI link: https://doi.org/10.1063/1.4801940
Published Online: 2013-04-15
Published Print: 2013-04-15
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Sung Park, Pil
Reddy, Kongara M.
Nath, Digbijoy N.
Yang, Zhichao
Padture, Nitin P.
Rajan, Siddharth
Funding for this research was provided by:
Office of Naval Research (N00014-11-1-0721)
National Science Foundation (DMR-0820414, ECS-0925529)