Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects
Crossref DOI link: https://doi.org/10.1063/1.4994393
Published Online: 2018-01-12
Published Print: 2018-01-14
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Tang, Kechao
Droopad, Ravi
McIntyre, Paul C.
Funding for this research was provided by:
Stanford Initiative in Nanoscale Materials and Processes
Semiconductor Research Corporation (Task ID 1437.008)