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Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD

Published Print: 2019-11

Authors

Herrera-Celis, José

Reyes-Betanzo, Claudia

Gelvez-Lizarazo, Oscar

Arriaga, L.G.

Itzmoyotl-Toxqui, Adrián
Funding

Funding for this research was provided by:

Consejo Nacional de Ciencia y Tecnología
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Text and Data Mining valid from 2019-11-01

Text and Data Mining valid from 2019-11-01

Version of Record valid from 2019-09-09
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This article is maintained by: Elsevier

Article Title: Low residual stress in hydrogenated amorphous silicon-carbon films deposited by low-temperature PECVD

Journal Title: Journal of Materials Research and Technology

CrossRef DOI link to publisher maintained version: https://doi.org/10.1016/j.jmrt.2019.09.026

Content Type: article

Copyright: © 2019 The Authors. Published by Elsevier B.V.

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