Physical and electrical characteristics of atomic-layer deposition-HfO2 films deposited on Si substrates having different silanol Si-OH densities
Crossref DOI link: https://doi.org/10.1116/1.4769206
Published Online: 2012-11-29
Published Print: 2013-01-01
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Molina, Joel
Zuniga, Carlos
Calleja, Wilfrido
Rosales, Pedro
Torres, Alfonso
Herrera-Gomez, Alberto
