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Characterization of atomic layer deposition HfO2, Al2O3, and plasma-enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Crossref DOI link: https://doi.org/10.1116/1.4769207

Published Online: 2012-12-06

Published Print: 2013-01-01

Update policy: https://doi.org/10.1063/aip-crossmark-policy-page

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