Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
Crossref DOI link: https://doi.org/10.1063/1.4773244
Published Online: 2012-12-21
Published Print: 2012-12-17
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Ganguly, Satyaki
Konar, Aniruddha
Hu, Zongyang
Xing, Huili
Jena, Debdeep
