Effect of postdeposition annealing on the electrical properties of β-Ga2O3 thin films grown on <i>p-</i>Si by plasma-enhanced atomic layer deposition
Crossref DOI link: https://doi.org/10.1116/1.4875935
Published Online: 2014-05-21
Published Print: 2014-07-01
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Altuntas, Halit
Donmez, Inci
Ozgit-Akgun, Cagla
Biyikli, Necmi
