Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
Crossref DOI link: https://doi.org/10.1063/1.4882117
Published Online: 2014-06-09
Published Print: 2014-06-14
Update policy: https://doi.org/10.1063/aip-crossmark-policy-page
Du, Weijie
Baba, Masakazu
Toko, Kaoru
Hara, Kosuke O.
Watanabe, Kentaro
Sekiguchi, Takashi
Usami, Noritaka
Suemasu, Takashi
Funding for this research was provided by:
Japan Science and Technology Agency (JST)
